ZXMN3A06DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 4.9A 8-SOIC
$1.26
Available to order
Reference Price (USD)
500+
$0.75570
1,000+
$0.61050
2,500+
$0.57420
5,000+
$0.54879
12,500+
$0.53064
Exquisite packaging
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ZXMN3A06DN8TA
$1.26
Product details
The ZXMN3A06DN8TA by Diodes Incorporated is a top-tier MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product is perfect for applications requiring high power efficiency and compact design, offering exceptional performance and reliability.\n\nKey attributes of the ZXMN3A06DN8TA include minimal conduction losses, high switching speed, and superior thermal management. The array configuration allows for efficient use of PCB space while maintaining high performance. Its design ensures compatibility with a variety of driving circuits, making it highly versatile.\n\nIdeal applications include robotics, consumer electronics, and aerospace systems. In robotics, it provides precise motor control and power management. Consumer electronics benefit from its efficiency and compact size. Aerospace systems rely on its reliability under extreme conditions.\n\nEnhance your designs with the ZXMN3A06DN8TA. Contact us for pricing and availability details. Our experts are ready to help you find the perfect solution for your needs.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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