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SSM6L09FUTE85LF

Toshiba Semiconductor and Storage
SSM6L09FUTE85LF Preview
Toshiba Semiconductor and Storage
MOSFET N/P-CH 30V 0.4A/0.2A US6
$0.51
Available to order
Reference Price (USD)
3,000+
$0.10260
6,000+
$0.09690
15,000+
$0.08835
30,000+
$0.08265
75,000+
$0.07980
Exquisite packaging
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SSM6L09FUTE85LF

SSM6L09FUTE85LF

$0.51

Product details

General specs

  • Product Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6

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