MMDT5451Q-7
Diodes Incorporated
Diodes Incorporated
SS HI VOLTAGE TRANSISTOR SOT363
$0.10
Available to order
Reference Price (USD)
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$0.09521
500+
$0.0942579
1000+
$0.0933058
1500+
$0.0923537
2000+
$0.0914016
2500+
$0.0904495
Exquisite packaging
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MMDT5451Q-7
$0.10
Product details
Diodes Incorporated's MMDT5451Q-7 stands as a superior choice in Bipolar Junction Transistor (BJT) Arrays within Discrete Semiconductor Products. This high-performance component combines multiple transistors with tightly controlled parameters in a single package. The MMDT5451Q-7 delivers exceptional current amplification with minimal variation between elements. Its design focuses on thermal equilibrium across all transistors for uniform performance. The product features low leakage currents and high breakdown voltage ratings. With its space-efficient packaging, it enables compact circuit designs without sacrificing capability. The MMDT5451Q-7 demonstrates excellent switching characteristics for both analog and digital applications. Its robust construction ensures reliability in challenging operating environments. Precision instrumentation benefits from its stable amplification characteristics. Motor drive circuits utilize its synchronized switching capabilities. Power conversion systems employ it for efficient energy management. The MMDT5451Q-7 also finds application in sophisticated control systems. Diodes Incorporated has implemented advanced quality assurance protocols in its manufacturing. The component's design facilitates effective heat dissipation in high-power scenarios. Its RoHS-compliant construction meets contemporary environmental standards. For engineers requiring reliable, high-performance transistor arrays, the MMDT5451Q-7 offers an excellent solution. Contact us today through our online platform to inquire about pricing and delivery options.
General specs
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 160V, 150V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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