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FMY1AT148

Rohm Semiconductor
FMY1AT148 Preview
Rohm Semiconductor
TRANS NPN/PNP 50V 0.15A 5SMT
$0.51
Available to order
Reference Price (USD)
3,000+
$0.11880
6,000+
$0.11160
15,000+
$0.10440
30,000+
$0.10080
Exquisite packaging
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FMY1AT148

FMY1AT148

$0.51

Product details

Rohm Semiconductor's FMY1AT148 stands as a superior choice in Bipolar Junction Transistor (BJT) Arrays within Discrete Semiconductor Products. This high-performance component combines multiple transistors with tightly controlled parameters in a single package. The FMY1AT148 delivers exceptional current amplification with minimal variation between elements. Its design focuses on thermal equilibrium across all transistors for uniform performance. The product features low leakage currents and high breakdown voltage ratings. With its space-efficient packaging, it enables compact circuit designs without sacrificing capability. The FMY1AT148 demonstrates excellent switching characteristics for both analog and digital applications. Its robust construction ensures reliability in challenging operating environments. Precision instrumentation benefits from its stable amplification characteristics. Motor drive circuits utilize its synchronized switching capabilities. Power conversion systems employ it for efficient energy management. The FMY1AT148 also finds application in sophisticated control systems. Rohm Semiconductor has implemented advanced quality assurance protocols in its manufacturing. The component's design facilitates effective heat dissipation in high-power scenarios. Its RoHS-compliant construction meets contemporary environmental standards. For engineers requiring reliable, high-performance transistor arrays, the FMY1AT148 offers an excellent solution. Contact us today through our online platform to inquire about pricing and delivery options.

General specs

  • Product Status: Active
  • Transistor Type: NPN, PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 180MHz, 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMT5

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