MMDT5451-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 160V/150V SOT363
$0.40
Available to order
Reference Price (USD)
3,000+
$0.08050
6,000+
$0.07315
15,000+
$0.06580
30,000+
$0.06213
75,000+
$0.05600
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MMDT5451-7-F
$0.40
Product details
Introducing the MMDT5451-7-F BJT Array by Diodes Incorporated, a premium offering in Discrete Semiconductor Products. This sophisticated transistor array combines multiple bipolar junction transistors with closely matched parameters. The MMDT5451-7-F excels in applications demanding coordinated switching or amplification across several channels. Its design emphasizes thermal stability and parameter uniformity throughout the array. The product delivers high current gain with minimal variation between individual transistors. With its compact footprint, it enables high-density circuit designs without performance compromise. The MMDT5451-7-F features low noise operation for sensitive signal processing applications. Its robust construction withstands mechanical stress and environmental factors. This BJT Array demonstrates excellent long-term parameter stability for reliable system operation. Power supply designers value its consistent performance in voltage regulation circuits. Audio engineers utilize it for balanced amplification stages in professional equipment. Automotive electronics benefit from its durability in challenging operating conditions. The MMDT5451-7-F also serves critical functions in industrial control systems. Diodes Incorporated has implemented rigorous quality control measures throughout production. The component's design facilitates heat dissipation in high-power applications. Its lead-free composition meets modern environmental standards. For design engineers seeking reliable, high-performance transistor arrays, the MMDT5451-7-F delivers exceptional value. Explore its capabilities further by submitting an inquiry through our online portal today.
General specs
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 160V, 150V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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