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DMN6070SFCL-7

Diodes Incorporated
DMN6070SFCL-7 Preview
Diodes Incorporated
MOSFET N-CH 60V 3A X1-DFN1616-6
$0.49
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$0.18345
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$0.17286
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$0.16227
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$0.15485
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Diodes Incorporated DMN6070SFCL-7 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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DMN6070SFCL-7

DMN6070SFCL-7

$0.49

Product details

Enhance your electronic designs with the DMN6070SFCL-7 single MOSFET transistor from Diodes Incorporated, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The DMN6070SFCL-7 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the DMN6070SFCL-7 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the DMN6070SFCL-7 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X1-DFN1616-6 (Type E)
  • Package / Case: 6-PowerUFDFN

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