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TSM480P06CH X0G

Taiwan Semiconductor Corporation
TSM480P06CH X0G Preview
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 60V 20A TO251
$2.28
Available to order
Reference Price (USD)
1+
$0.71000
10+
$0.59800
100+
$0.44880
500+
$0.32912
1,875+
$0.25432
3,750+
$0.23188
5,625+
$0.21692
Exquisite packaging
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TSM480P06CH X0G

TSM480P06CH X0G

$2.28

Product details

The TSM480P06CH X0G from Taiwan Semiconductor Corporation is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the TSM480P06CH X0G provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The TSM480P06CH X0G finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the TSM480P06CH X0G and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Stub Leads, IPak

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