Shopping cart

Subtotal: $0.00

DMN3053L-7

Diodes Incorporated
DMN3053L-7 Preview
Diodes Incorporated
MOSFET N-CH 30V 4A SOT23
$0.43
Available to order
Reference Price (USD)
3,000+
$0.12896
6,000+
$0.12192
15,000+
$0.11488
30,000+
$0.10643
75,000+
$0.10291
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Diodes Incorporated DMN3053L-7 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
DMN3053L-7

DMN3053L-7

$0.43

Product details

Diodes Incorporated's DMN3053L-7 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The DMN3053L-7 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The DMN3053L-7 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 760mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Viewed products

Vishay Siliconix

IRF9640PBF

$0.00 (not set)
onsemi

FQD5N60CTM

$0.00 (not set)
Infineon Technologies

IPT020N10N5ATMA1

$0.00 (not set)
Toshiba Semiconductor and Storage

TPH6400ENH,L1Q

$0.00 (not set)
Texas Instruments

CSD15380F3T

$0.00 (not set)
Infineon Technologies

IMW65R027M1HXKSA1

$0.00 (not set)
Fairchild Semiconductor

HUFA76639P3

$0.00 (not set)
Microchip Technology

APTM100UM45DAG

$0.00 (not set)
Fairchild Semiconductor

FDP6670AL

$0.00 (not set)
Infineon Technologies

AUIRFB4410

$0.00 (not set)
Top