IPT020N10N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 31A/260A 8HSOF
$7.37
Available to order
Reference Price (USD)
1+
$7.37000
500+
$7.2963
1000+
$7.2226
1500+
$7.1489
2000+
$7.0752
2500+
$7.0015
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IPT020N10N5ATMA1
$7.37
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 202µA
- Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 273W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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