DMN2310UTQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT523 T&R
$0.08
Available to order
Reference Price (USD)
1+
$0.08096
500+
$0.0801504
1000+
$0.0793408
1500+
$0.0785312
2000+
$0.0777216
2500+
$0.076912
Exquisite packaging
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| EMS | 3-7 days |
Diodes Incorporated DMN2310UTQ-7 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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DMN2310UTQ-7
$0.08
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 290mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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