STP13N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 10A TO220
$2.26
Available to order
Reference Price (USD)
1+
$1.96000
50+
$1.58400
100+
$1.42560
500+
$1.10880
1,000+
$0.91872
2,500+
$0.85536
5,000+
$0.82368
Exquisite packaging
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STP13N65M2
$2.26
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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