DGTD65T50S1PT
Diodes Incorporated
Diodes Incorporated
IGBT 600V-X TO247 TUBE 0.45K
$3.93
Available to order
Reference Price (USD)
450+
$4.55282
Exquisite packaging
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DGTD65T50S1PT
$3.93
Product details
Optimize your power electronics with the DGTD65T50S1PT single IGBT transistor from Diodes Incorporated. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The DGTD65T50S1PT is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the DGTD65T50S1PT can enhance your next project request a quote now.
General specs
- Product Status: Last Time Buy
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Power - Max: 375 W
- Switching Energy: 770µJ (on), 550µJ (off)
- Input Type: Standard
- Gate Charge: 287 nC
- Td (on/off) @ 25°C: 58ns/328ns
- Test Condition: 400V, 50A, 7.9Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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