DGTD65T15H2TF
Diodes Incorporated
Diodes Incorporated
IGBT600V-XITO-220AB
$2.02
Available to order
Reference Price (USD)
1+
$2.36000
10+
$2.13800
100+
$1.74750
500+
$1.46250
1,000+
$1.23750
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DGTD65T15H2TF
$2.02
Product details
Experience unparalleled power control with the DGTD65T15H2TF single IGBT transistor by Diodes Incorporated. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The DGTD65T15H2TF boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the DGTD65T15H2TF offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
- Power - Max: 48 W
- Switching Energy: 270µJ (on), 86µJ (off)
- Input Type: Standard
- Gate Charge: 61 nC
- Td (on/off) @ 25°C: 19ns/128ns
- Test Condition: 400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 150 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
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