IKFW75N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IKFW75N65ES5XKSA1
$8.24
Available to order
Reference Price (USD)
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$8.24000
500+
$8.1576
1000+
$8.0752
1500+
$7.9928
2000+
$7.9104
2500+
$7.828
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Infineon Technologies IKFW75N65ES5XKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IKFW75N65ES5XKSA1
$8.24
Product details
The IKFW75N65ES5XKSA1 by Infineon Technologies is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the IKFW75N65ES5XKSA1 is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the IKFW75N65ES5XKSA1 and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
- Power - Max: 148 W
- Switching Energy: 1.48mJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 144 nC
- Td (on/off) @ 25°C: 24ns/152ns
- Test Condition: 400V, 60A, 8Ohm, 15V
- Reverse Recovery Time (trr): 71 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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