Shopping cart

Subtotal: $0.00

DDTD123TC-7-F

Diodes Incorporated
DDTD123TC-7-F Preview
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
$0.32
Available to order
Reference Price (USD)
3,000+
$0.05753
6,000+
$0.05060
15,000+
$0.04367
30,000+
$0.04136
75,000+
$0.03905
150,000+
$0.03520
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Diodes Incorporated DDTD123TC-7-F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
DDTD123TC-7-F

DDTD123TC-7-F

$0.32

Product details

Engineered for efficiency, the DDTD123TC-7-F pre-biased BJT by Diodes Incorporated delivers superior signal amplification in compact packages. Its built-in bias network eliminates external components, reducing board space and assembly costs. The transistor excels in load switching, LED driving, and audio pre-amplification scenarios. Notable characteristics involve thermal shutdown protection, wide operating temperature ranges, and compatibility with automated pick-and-place systems. Industries leveraging this solution include industrial automation (PLC signal conditioning), consumer electronics (battery management systems), and telecommunications (signal repeaters). Streamline your BOM with this versatile component request a quote now for lead time details.

General specs

  • Product Status: Active
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 2.2 kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3

Viewed products

Rohm Semiconductor

DTC015EMT2L

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1413(TE85L,F)

$0.00 (not set)
Nexperia USA Inc.

NHDTA144EUF

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1301,LF

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1116,LF(CT

$0.00 (not set)
Diodes Incorporated

DDTA125TCA-7

$0.00 (not set)
Diodes Incorporated

DDTC144ECAQ-7-F

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1103MFV,L3F(CT

$0.00 (not set)
Rohm Semiconductor

DTC623TUT106

$0.00 (not set)
Comchip Technology

DTC114YCA-HF

$0.00 (not set)
Top