RN1301,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A USM
$0.18
Available to order
Reference Price (USD)
3,000+
$0.03213
6,000+
$0.02898
15,000+
$0.02520
30,000+
$0.02268
75,000+
$0.02016
150,000+
$0.01680
Exquisite packaging
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RN1301,LF
$0.18
Product details
Delivering unmatched consistency, the RN1301,LF pre-biased transistor by Toshiba Semiconductor and Storage features laser-trimmed resistors for precise biasing accuracy. The BJT excels in audio frequency applications due to its low intermodulation distortion, while its robust construction supports repetitive surge currents in switching scenarios. Typical deployments include power supply feedback loops, CNC machine signal conditioning, and photovoltaic system monitoring circuits. The component's MSL3-rated packaging guarantees moisture sensitivity control during storage. Engineers value its parametric consistency across extended production runs, reducing calibration overhead. Initiate your design-in process request free samples of RN1301,LF through our e-commerce platform.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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