DDTC114GE-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 150MW SOT523
$0.06
Available to order
Reference Price (USD)
3,000+
$0.06038
6,000+
$0.05250
15,000+
$0.04463
Exquisite packaging
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DDTC114GE-7-F
$0.06
Product details
Precision-engineered for signal integrity, Diodes Incorporated's DDTC114GE-7-F pre-biased BJT offers predictable gain characteristics critical for feedback systems. The transistor's monolithic construction ensures perfect resistor matching, eliminating thermal drift issues in differential amplifiers. Target applications include industrial process control instrumentation, laboratory equipment signal paths, and avionics data acquisition modules. Its gold-bonded leads provide corrosion resistance in high-humidity environments, while the halogen-free mold compound meets ecological directives. The device supports high-frequency operation up to VHF ranges when properly impedance-matched. Access reference designs incorporating DDTC114GE-7-F by submitting a project brief through our engineering collaboration portal.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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