PDTD113ET,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
$0.34
Available to order
Reference Price (USD)
3,000+
$0.07625
6,000+
$0.06728
15,000+
$0.05831
30,000+
$0.05532
75,000+
$0.05233
150,000+
$0.04934
Exquisite packaging
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PDTD113ET,215
$0.34
Product details
Delivering unmatched consistency, the PDTD113ET,215 pre-biased transistor by Nexperia USA Inc. features laser-trimmed resistors for precise biasing accuracy. The BJT excels in audio frequency applications due to its low intermodulation distortion, while its robust construction supports repetitive surge currents in switching scenarios. Typical deployments include power supply feedback loops, CNC machine signal conditioning, and photovoltaic system monitoring circuits. The component's MSL3-rated packaging guarantees moisture sensitivity control during storage. Engineers value its parametric consistency across extended production runs, reducing calibration overhead. Initiate your design-in process request free samples of PDTD113ET,215 through our e-commerce platform.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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