SS9018FBU
Fairchild Semiconductor
Fairchild Semiconductor
RF 0.05A, VERY HIGH FREQUENCY BA
$0.02
Available to order
Reference Price (USD)
10,000+
$0.02685
Exquisite packaging
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SS9018FBU
$0.02
Product details
The SS9018FBU from Fairchild Semiconductor represents a breakthrough in RF BJT transistor technology for discrete semiconductor applications. This high-performance bipolar transistor features an innovative emitter ballasting technique that ensures uniform current distribution under high-power conditions. Its optimized geometry reduces parasitic inductance while enhancing thermal dissipation properties. The device demonstrates exceptional third-order intercept point (IP3) performance for demanding linearity requirements. Wireless infrastructure designers utilize this component in macrocell and microcell base station power amplifiers. Satellite payload engineers specify it for transponder signal conditioning and low-noise block converter designs. In automotive applications, it supports advanced driver assistance systems (ADAS) and vehicle infotainment modules. The SS9018FBU also enables breakthrough performance in radio astronomy receivers and quantum communication systems. Its lead-frame design minimizes bond wire inductance for improved high-frequency response. Fairchild Semiconductor provides complete characterization data including noise figure contours and stability factor plots. The product undergoes stringent quality control measures with full traceability throughout the manufacturing process. For design engineers seeking to push RF performance boundaries, the SS9018FBU offers measurable advantages. Download our application notes on impedance matching techniques or thermal management best practices. Request a personalized consultation to determine how this transistor can optimize your specific circuit design parameters.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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