NE68119-T1-A
Renesas
Renesas
SAME AS 2SC5007 NPN SILICON AMPL
$0.80
Available to order
Reference Price (USD)
1+
$0.80000
500+
$0.792
1000+
$0.784
1500+
$0.776
2000+
$0.768
2500+
$0.76
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Renesas NE68119-T1-A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NE68119-T1-A
$0.80
Product details
Renesas's NE68119-T1-A represents the next evolution in RF BJT transistors, combining cutting-edge semiconductor technology with practical design features. This discrete semiconductor product excels in high-frequency switching and amplification tasks, featuring optimized junction characteristics for superior current handling. The transistor's innovative architecture reduces parasitic capacitance while maintaining excellent power gain across its operational bandwidth. Key advantages include a wide dynamic range for variable input signals, improved thermal dissipation properties, and consistent batch-to-batch performance reliability. Designed for mission-critical applications, it performs exceptionally in 5G network infrastructure components and microwave relay systems. Broadcast engineers utilize its clean signal reproduction in FM/HD radio transmitters and television broadcasting equipment. In the transportation sector, it enables reliable communication in railway signaling and aviation navigation systems. The NE68119-T1-A also supports emerging technologies like quantum computing research equipment and RFID tracking systems. Its lead-free construction complies with global environmental standards without sacrificing performance. For system designers seeking a balance between RF precision and power efficiency, this transistor delivers outstanding results. Renesas provides comprehensive technical documentation and application notes to simplify your design process. Take the next step in your RF project complete our online inquiry form to receive personalized pricing and delivery options for the NE68119-T1-A.
General specs
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
- Gain: 12dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75 (USM)
Viewed products
