MRF6S19100HR3
Freescale Semiconductor
Freescale Semiconductor
RF L BAND, N-CHANNEL
$62.06
Available to order
Reference Price (USD)
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$62.06000
500+
$61.4394
1000+
$60.8188
1500+
$60.1982
2000+
$59.5776
2500+
$58.957
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MRF6S19100HR3
$62.06
Product details
The MRF6S19100HR3 from Freescale Semiconductor is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The MRF6S19100HR3 excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the MRF6S19100HR3 perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The MRF6S19100HR3 offers reliable and accurate signal processing in all applications. Freescale Semiconductor has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the MRF6S19100HR3 is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the MRF6S19100HR3 from Freescale Semiconductor for exceptional RF solutions.
General specs
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 16.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 900 mA
- Power - Output: 22W
- Voltage - Rated: 68 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
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