PXAE213708NB-V1-R2
Wolfspeed, Inc.
Wolfspeed, Inc.
SI LDMOS AMP 370W 2110-2170MHZ
$84.46
Available to order
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$81.07776
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$80.2332
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PXAE213708NB-V1-R2
$84.46
Product details
Upgrade your RF systems with the PXAE213708NB-V1-R2 RF MOSFET transistor from Wolfspeed, Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The PXAE213708NB-V1-R2 offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the PXAE213708NB-V1-R2 ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The PXAE213708NB-V1-R2 ensures accurate and stable signal processing in all scenarios. Wolfspeed, Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the PXAE213708NB-V1-R2 is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the PXAE213708NB-V1-R2 from Wolfspeed, Inc. for superior RF performance.
General specs
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.18GHz
- Gain: 16dB
- Voltage - Test: 29 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 750 mA
- Power - Output: 54W
- Voltage - Rated: 65 V
- Package / Case: PG-HB2SOF-8-1
- Supplier Device Package: PG-HB2SOF-8-1
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