RGT60TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 55A 194W TO-247N
$3.16
Available to order
Reference Price (USD)
1+
$2.98000
10+
$2.67800
30+
$2.53133
120+
$2.19375
270+
$2.08126
510+
$1.86751
1,020+
$1.57500
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RGT60TS65DGC11
$3.16
Product details
Upgrade your power electronics with the RGT60TS65DGC11 single IGBT transistor from Rohm Semiconductor. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The RGT60TS65DGC11 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the RGT60TS65DGC11 delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 194 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 29ns/100ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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