AFGY100T65SPD
onsemi
onsemi
IGBT - 650 V 100 A FS3 FOR EV TR
$10.44
Available to order
Reference Price (USD)
1+
$10.44000
500+
$10.3356
1000+
$10.2312
1500+
$10.1268
2000+
$10.0224
2500+
$9.918
Exquisite packaging
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AFGY100T65SPD
$10.44
Product details
The AFGY100T65SPD from onsemi is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the AFGY100T65SPD ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the AFGY100T65SPD for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
- Power - Max: 660 W
- Switching Energy: 5.1mJ (on), 2.7mJ (off)
- Input Type: Standard
- Gate Charge: 109 nC
- Td (on/off) @ 25°C: 36ns/78ns
- Test Condition: 400V, 100A, 5Ohm, 15V
- Reverse Recovery Time (trr): 105 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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