HFA3127B
Harris Corporation
Harris Corporation
RF SMALL SIGNAL TRANSISTOR
$4.92
Available to order
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$4.92000
500+
$4.8708
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$4.8216
1500+
$4.7724
2000+
$4.7232
2500+
$4.674
Exquisite packaging
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HFA3127B
$4.92
Product details
Harris Corporation's HFA3127B sets the standard for RF performance in bipolar junction transistors within the discrete semiconductor products category. This high-frequency BJT combines excellent power added efficiency with superior linearity characteristics for demanding amplification tasks. Its unique collector design minimizes Kirk effect while maintaining high breakdown voltage capabilities. The transistor features optimized internal matching for reduced external component count in final applications. Telecommunications equipment manufacturers utilize this component in microwave radio links and software-defined radio platforms. Defense applications include electronic surveillance systems and tactical communication jammers. In the consumer electronics space, it enhances performance in next-generation WiFi 6E access points and 60GHz millimeter-wave devices. Industrial automation systems benefit from its reliability in wireless machine-to-machine (M2M) communication modules. The HFA3127B also enables precise signal control in scientific instruments such as mass spectrometers and lidar systems. Its moisture-resistant packaging ensures long-term reliability in challenging environmental conditions. Harris Corporation provides complete device characterization including large-signal and small-signal parameter sets. The product undergoes 100% automated testing to guarantee specified performance parameters. For engineers developing cutting-edge RF solutions, the HFA3127B delivers uncompromising quality and performance. Visit our product page to download the latest datasheet revision or view 3D packaging models. Submit your inquiry today to receive volume pricing tiers and delivery options tailored to your production schedule.
General specs
- Product Status: Obsolete
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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