2SC5226A-5-TL-E
onsemi
onsemi
RF TRANS NPN 10V 7GHZ 3MCP
$0.50
Available to order
Reference Price (USD)
3,000+
$0.13947
6,000+
$0.13101
15,000+
$0.12256
30,000+
$0.11270
Exquisite packaging
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onsemi 2SC5226A-5-TL-E is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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2SC5226A-5-TL-E
$0.50
Product details
The 2SC5226A-5-TL-E from onsemi is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the discrete semiconductor products category. This transistor excels in radio frequency amplification, offering reliable signal processing with excellent gain characteristics. Ideal for both low-noise and power amplification stages, it ensures stable operation across various frequency ranges. Key features include robust construction for thermal stability, optimized packaging for minimal parasitic effects, and consistent performance under variable load conditions. The 2SC5226A-5-TL-E is engineered to meet stringent industry standards, making it a trusted choice for RF circuit designers. Its versatile design supports easy integration into existing systems while maintaining high efficiency. Common applications include wireless communication base stations, automotive radar systems, and medical imaging equipment. For aerospace and defense projects, this transistor provides critical signal integrity in radar and satellite communications. In consumer electronics, it enhances performance in smart home devices and IoT connectivity solutions. To inquire about pricing and availability for your specific needs, contact our sales team today or submit an online quote request. Discover how the 2SC5226A-5-TL-E can optimize your RF designs with onsemi's proven technology.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 1GHz
- Gain: 12dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-MCP
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