IXYK100N65B3D1
IXYS
IXYS
IGBT
$13.39
Available to order
Reference Price (USD)
25+
$9.96520
Exquisite packaging
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IXYK100N65B3D1
$13.39
Product details
Experience unparalleled power control with the IXYK100N65B3D1 single IGBT transistor by IXYS. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IXYK100N65B3D1 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IXYK100N65B3D1 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 225 A
- Current - Collector Pulsed (Icm): 460 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
- Power - Max: 830 W
- Switching Energy: 1.27mJ (on), 2mJ (off)
- Input Type: Standard
- Gate Charge: 168 nC
- Td (on/off) @ 25°C: 29ns/150ns
- Test Condition: 400V, 50A, 3Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
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