C4H2327N110AZ
Ampleon USA Inc.
Ampleon USA Inc.
C4H2327N110AZ/DFN 6.5X7.0/REELDP
$47.35
Available to order
Reference Price (USD)
1+
$47.35000
500+
$46.8765
1000+
$46.403
1500+
$45.9295
2000+
$45.456
2500+
$44.9825
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C4H2327N110AZ
$47.35
Product details
The C4H2327N110AZ by Ampleon USA Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The C4H2327N110AZ excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the C4H2327N110AZ perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The C4H2327N110AZ delivers precise and stable signal processing across all applications. Ampleon USA Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the C4H2327N110AZ is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the C4H2327N110AZ from Ampleon USA Inc. for unmatched RF quality.
General specs
- Product Status: Active
- Transistor Type: -
- Frequency: 2.3GHz ~ 2.69GHz
- Gain: 15dB
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 50 V
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-DFN (7x6.5)
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