A5G35S004N-3400
NXP USA Inc.
NXP USA Inc.
A5G35S004N 3400-4300 MHZ REFEREN
$105.47
Available to order
Reference Price (USD)
1+
$105.47000
500+
$104.4153
1000+
$103.3606
1500+
$102.3059
2000+
$101.2512
2500+
$100.1965
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A5G35S004N-3400
$105.47
Product details
The A5G35S004N-3400 from NXP USA Inc. is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The A5G35S004N-3400 excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the A5G35S004N-3400 perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The A5G35S004N-3400 offers reliable and accurate signal processing in all applications. NXP USA Inc. has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the A5G35S004N-3400 is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the A5G35S004N-3400 from NXP USA Inc. for exceptional RF solutions.
General specs
- Product Status: Active
- Transistor Type: -
- Frequency: 3.3GHz ~ 4.3GHz
- Gain: 16.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 12 mA
- Power - Output: 24.5dBm
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (4x4.5)
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