BLM8G0710S-30PBY
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 35DB SOT12112
$38.53
Available to order
Reference Price (USD)
100+
$32.08280
300+
$29.94390
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BLM8G0710S-30PBY
$38.53
Product details
The BLM8G0710S-30PBY from Ampleon USA Inc. is a top-tier RF MOSFET transistor in the discrete semiconductor products category. Designed for high-frequency applications, it offers exceptional signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The BLM8G0710S-30PBY excels in power handling and thermal performance, ensuring reliable operation. Its high gain and linearity make it ideal for precision RF systems. The compact and durable design allows for easy integration into various circuits. It is engineered to deliver consistent performance in both commercial and industrial environments. Key features include fast switching, low distortion, and superior impedance matching. These attributes make the BLM8G0710S-30PBY perfect for telecommunications equipment, radar systems, and broadcast technology. It is also highly effective in medical diagnostic devices, automotive safety systems, and industrial automation. The BLM8G0710S-30PBY provides reliable and accurate signal processing in all scenarios. Ampleon USA Inc. has developed this MOSFET to meet stringent quality standards. For high-performance RF solutions, the BLM8G0710S-30PBY is a trusted option. Enhance your electronic projects with this advanced transistor. Contact us for pricing details or submit an online inquiry today. Choose the BLM8G0710S-30PBY from Ampleon USA Inc. for exceptional RF performance.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 957.5MHz
- Gain: 35dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 30 mA
- Power - Output: 3W
- Voltage - Rated: 65 V
- Package / Case: SOT-1211-3
- Supplier Device Package: 16-HSOPF
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