NE3512S02-T1D-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.60
Available to order
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NE3512S02-T1D-A
$0.60
Product details
The NE3512S02-T1D-A from Renesas Electronics America Inc is a high-performance RF MOSFET transistor designed for demanding applications in the discrete semiconductor products category. This transistor excels in radio frequency (RF) amplification, offering superior signal clarity and efficiency. Ideal for both low-noise and high-power scenarios, it ensures reliable performance in critical circuits. With its advanced FET technology, the NE3512S02-T1D-A delivers exceptional gain and stability, making it a top choice for RF designs. Its robust construction guarantees durability even in harsh operating conditions. The NE3512S02-T1D-A is engineered to minimize power loss while maximizing output, ensuring optimal energy utilization. Whether for commercial or industrial use, this MOSFET transistor stands out for its precision and reliability. Its compact design allows for easy integration into various circuit layouts. The NE3512S02-T1D-A is a versatile solution for modern electronic systems requiring high-frequency operation. Trust Renesas Electronics America Inc for cutting-edge semiconductor technology that meets the highest standards. Key features include low distortion, high linearity, and excellent thermal management. These attributes make the NE3512S02-T1D-A suitable for a wide range of RF applications. Common uses include wireless communication systems, radar equipment, and broadcast transmitters. It is also ideal for medical devices, automotive electronics, and industrial automation systems. The NE3512S02-T1D-A ensures consistent performance across all these applications. For engineers seeking a dependable RF MOSFET, the NE3512S02-T1D-A is an outstanding option. Ready to enhance your RF designs with this high-quality transistor? Contact us today for pricing and availability. Submit your inquiry online to get started with the NE3512S02-T1D-A from Renesas Electronics America Inc.
General specs
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 13.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.35dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
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