BLC9G22LS-120VTZ
Ampleon USA Inc.
Ampleon USA Inc.
BLC9G22LS-120VT/SOT1271/TRAYDP
$61.10
Available to order
Reference Price (USD)
1+
$66.15000
20+
$62.13800
100+
$55.72370
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BLC9G22LS-120VTZ
$61.10
Product details
The BLC9G22LS-120VTZ by Ampleon USA Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The BLC9G22LS-120VTZ excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the BLC9G22LS-120VTZ perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The BLC9G22LS-120VTZ delivers precise and stable signal processing across all applications. Ampleon USA Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the BLC9G22LS-120VTZ is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the BLC9G22LS-120VTZ from Ampleon USA Inc. for unmatched RF quality.
General specs
- Product Status: Last Time Buy
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.18GHz
- Gain: 18.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): 2.8µA
- Noise Figure: -
- Current - Test: 700 mA
- Power - Output: 120W
- Voltage - Rated: 65 V
- Package / Case: SOT-1271-2
- Supplier Device Package: SOT1271-2
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