B10G3741N55DZ
Ampleon USA Inc.
Ampleon USA Inc.
IC 28V LDMOS RF SOT1462-1
$23.18
Available to order
Reference Price (USD)
1+
$23.18000
500+
$22.9482
1000+
$22.7164
1500+
$22.4846
2000+
$22.2528
2500+
$22.021
Exquisite packaging
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B10G3741N55DZ
$23.18
Product details
Maximize your RF capabilities with the B10G3741N55DZ RF MOSFET transistor from Ampleon USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The B10G3741N55DZ handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The B10G3741N55DZ is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The B10G3741N55DZ ensures consistent operation across a wide frequency range. Ampleon USA Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the B10G3741N55DZ is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the B10G3741N55DZ from Ampleon USA Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: 20-QFN Exposed Pad
- Supplier Device Package: 20-PQFN (8x8)
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