BLM7G1822S-40PBY
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 31.5DB SOT12111
$38.53
Available to order
Reference Price (USD)
100+
$38.47730
Exquisite packaging
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BLM7G1822S-40PBY
$38.53
Product details
Upgrade your RF systems with the BLM7G1822S-40PBY RF MOSFET transistor from Ampleon USA Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The BLM7G1822S-40PBY offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the BLM7G1822S-40PBY ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The BLM7G1822S-40PBY ensures accurate and stable signal processing in all scenarios. Ampleon USA Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the BLM7G1822S-40PBY is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the BLM7G1822S-40PBY from Ampleon USA Inc. for superior RF performance.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.81GHz ~ 2.17GHz
- Gain: 31.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 4W
- Voltage - Rated: 65 V
- Package / Case: SOT-1211-1
- Supplier Device Package: 16-HSOPF
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