Industry’s first space-grade 200V GaN FET gate driver from TI helps satellites become smaller and more efficient 2025-02-25 Ranging from 22V to 200V and supporting different radiation levels, TI’s new family of gate drivers enables designers to improve power system efficiency for every type of space mission
TI Nods to Smaller, More Efficient Satellites With GaN FET Gate Driver 2025-03-17 With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any space mission.
Texas Instruments Accelerates 12-Inch Fab Expansion with Sherman Site Commencing Production 2025-04-09 Strategic manufacturing investments align with AI-driven demand surge and CHIPS Act incentives
