Industry’s first space-grade 200V GaN FET gate driver from TI helps satellites become smaller and more efficient 2025-02-25 Ranging from 22V to 200V and supporting different radiation levels, TI’s new family of gate drivers enables designers to improve power system efficiency for every type of space mission
ST and Innoscience sign GaN power device technology development and manufacturing agreement 2025-04-08 STMicroelectronics of Geneva, Switzerland and InnoScience (Suzhou) Technology Holding Co Ltd - which manufactures gallium nitride (GaN) power chips
Infineon launches first industrial GaN transistor product family with integrated Schottky diode 2025-04-15 Infineon Technologies AG of Munich, Germany has launched what it says are the first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.
