Industry’s first space-grade 200V GaN FET gate driver from TI helps satellites become smaller and more efficient 2025-02-25 Ranging from 22V to 200V and supporting different radiation levels, TI’s new family of gate drivers enables designers to improve power system efficiency for every type of space mission
ST and Innoscience sign GaN power device technology development and manufacturing agreement 2025-04-08 STMicroelectronics of Geneva, Switzerland and InnoScience (Suzhou) Technology Holding Co Ltd - which manufactures gallium nitride (GaN) power chips
Infineon launches first industrial GaN transistor product family with integrated Schottky diode 2025-04-15 Infineon Technologies AG of Munich, Germany has launched what it says are the first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.
Micro-gravity manufacturing firm Space Forge to be CISM’s first incubation client 2025-06-10 Swansea University has signed a deal that makes Space Forge Ltd of Cardiff, South Wales, UK (which is pioneering space-based advanced materials manufacturing via fully returnable satellites) the first firm to be physically hosted in the Centre for Integrative Semiconductor Materials (CISM).
EPC Intros GaN 3-Phase Motor Drive Inverter Eval Board 2025-06-18 EPC9196 brings high-speed, medium-voltage BLDC drive capability to compact platforms.
Wise Integration Digital Controller Enables Switching Frequencies Up to 2MHz 2025-06-29 Wise Integration's WiseWare 1.1 unlocks new levels of power density, efficiency, and form factor in compact AC-DC power converters.
