ROHM Introduces 650V GaN HEMT in Compact TOLL Package with Excellent Heat Dissipation

ROHM has introduced 650V GaN HEMTs housed in the TOLL (TO-LeadLess) package, with the newly developed GNP2070TD-Z. Designed for compactness and superior heat dissipation, this package offers high current capacity and outstanding switching performance. As a result, the TOLL package is gaining traction in applications requiring robust power handling, particularly within industrial equipment and automotive systems. For this launch, ROHM has partnered with ATX SEMICONDUCTOR (WEIHAI) CO., LTD. (hereinafter ATX), a well-established OSAT (Outsourced Semiconductor Assembly and Test) provider, to outsource package manufacturing.

Enhancing the efficiency of motors and power supplies—which collectively account for a substantial portion of global electricity consumption—has become a key challenge in achieving a decarbonized society. Power devices play a crucial role in improving efficiency. Adopting advanced materials like SiC (Silicon Carbide) and GaN is expected to drive significant gains in power supply performance.

ROHM commenced mass production of its first-generation 650V GaN HEMTs in April 2023, followed by the launch of power stage ICs integrating a gate driver and 650V GaN HEMT within a single package. Now, ROHM has introduced a new product featuring second-generation elements in a TOLL package, complementing its existing DFN8080 package lineup. This expansion enhances ROHM’s 650V GaN HEMT offerings, catering to market demands for increasingly compact and efficient high-power applications.

The latest products incorporate second-generation GaN-on-Si chips within the TOLL package, delivering industry-leading performance in the key device metric that links ON-resistance and output charge (RDS(ON) × Qoss). This advancement supports further miniaturization and improves energy efficiency in power systems requiring high voltage resistance and fast switching speeds.

To enable mass production, ROHM has leveraged its proprietary technology and expertise in device design, refined through a vertically integrated production system, to oversee product design and planning. As part of the collaboration announced on December 10, 2024, front-end manufacturing is carried out by Taiwan Semiconductor Manufacturing Company Limited (TSMC), while back-end processing is handled by ATX. Additionally, ROHM aims to collaborate with ATX for the production of automotive-grade GaN devices. With the adoption of GaN devices in the automotive sector projected to accelerate in 2026, ROHM is committed to ensuring the swift introduction of automotive-grade GaN solutions. ROHM is poised to meet the growing demand for high-performance GaN technology in next-generation automotive applications by strengthening these strategic partnerships alongside its in-house development efforts.