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HER508G-D1-0000

Yangzhou Yangjie Electronic Technology Co.,Ltd
HER508G-D1-0000 Preview
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 5A DO201AD
$0.58
Available to order
Reference Price (USD)
1+
$0.58000
500+
$0.5742
1000+
$0.5684
1500+
$0.5626
2000+
$0.5568
2500+
$0.551
Exquisite packaging
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Yangzhou Yangjie Electronic Technology Co.,Ltd HER508G-D1-0000 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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HER508G-D1-0000

HER508G-D1-0000

$0.58

Product details

Experience superior rectification performance with the HER508G-D1-0000 single diode from Yangzhou Yangjie Electronic Technology Co.,Ltd, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The HER508G-D1-0000 performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the HER508G-D1-0000 delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
  • Capacitance @ Vr, F: 52pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD (DO-27)
  • Operating Temperature - Junction: -55°C ~ 150°C

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