G3JF-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 3A SMAF
$0.22
Available to order
Reference Price (USD)
1+
$0.22000
500+
$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
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| EMS | 3-7 days |
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G3JF-F1-0000HF
$0.22
Product details
The G3JF-F1-0000HF from Yangzhou Yangjie Electronic Technology Co.,Ltd is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. This diode ensures reliable operation with its robust construction and advanced semiconductor technology. Ideal for both industrial and consumer electronics, the G3JF-F1-0000HF offers excellent forward voltage characteristics and low reverse leakage current, making it a versatile choice for designers. Its compact form factor allows for easy integration into space-constrained designs. Whether you're working on power supplies, battery chargers, or signal demodulation circuits, this diode delivers consistent performance. Key features include fast switching capabilities, high surge current tolerance, and superior thermal management. Common applications include automotive systems, renewable energy inverters, and telecommunications equipment. For pricing and availability, submit an inquiry today to find the perfect solution for your project needs.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 18pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAF
- Operating Temperature - Junction: -55°C ~ 150°C
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