WAS530M12BM3
Wolfspeed, Inc.
Wolfspeed, Inc.
SIC, MODULE, 530A, 1200V, 62MM,
$1,032.15
Available to order
Reference Price (USD)
1+
$1032.15000
500+
$1021.8285
1000+
$1011.507
1500+
$1001.1855
2000+
$990.864
2500+
$980.5425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Wolfspeed, Inc. WAS530M12BM3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
WAS530M12BM3
$1,032.15
Product details
The WAS530M12BM3 from Wolfspeed, Inc. is a high-efficiency MOSFET array in the Discrete Semiconductor Products category, part of the Transistors - FETs, MOSFETs - Arrays subcategory. This product is designed for applications requiring high power density and reliable performance.\n\nKey features of the WAS530M12BM3 include low on-resistance, fast switching, and superior thermal characteristics. The array format integrates multiple transistors, simplifying design and saving board space. Its robust construction ensures durability in challenging environments.\n\nIdeal uses include electric vehicle power systems, industrial controls, and consumer electronics. Electric vehicle power systems benefit from its high current handling and efficiency. Industrial controls utilize its reliability for precise operation. Consumer electronics rely on its compact design and performance.\n\nEnhance your designs with the WAS530M12BM3. Request a quote today to explore how this MOSFET array can meet your requirements. Our team is here to provide the support you need.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
- Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 127mA
- Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Viewed products
