GTVA123501FA-V1-R0
Wolfspeed, Inc.
Wolfspeed, Inc.
350W GAN HEMT 50V 1.2-1.4GHZ FET
$678.18
Available to order
Reference Price (USD)
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$678.18000
500+
$671.3982
1000+
$664.6164
1500+
$657.8346
2000+
$651.0528
2500+
$644.271
Exquisite packaging
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GTVA123501FA-V1-R0
$678.18
Product details
Maximize your RF capabilities with the GTVA123501FA-V1-R0 RF MOSFET transistor from Wolfspeed, Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The GTVA123501FA-V1-R0 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The GTVA123501FA-V1-R0 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The GTVA123501FA-V1-R0 ensures consistent operation across a wide frequency range. Wolfspeed, Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the GTVA123501FA-V1-R0 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the GTVA123501FA-V1-R0 from Wolfspeed, Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 20dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 350W
- Voltage - Rated: 125 V
- Package / Case: H-37265J-2
- Supplier Device Package: H-37265J-2
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