GTRA362002FC-V1-R0
Wolfspeed, Inc.

Wolfspeed, Inc.
200W, GAN HEMT, 48V, 3400-3600MH
$159.07
Available to order
Reference Price (USD)
1+
$159.06800
500+
$157.47732
1000+
$155.88664
1500+
$154.29596
2000+
$152.70528
2500+
$151.1146
Exquisite packaging
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Product details
Maximize your RF capabilities with the GTRA362002FC-V1-R0 RF MOSFET transistor from Wolfspeed, Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The GTRA362002FC-V1-R0 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The GTRA362002FC-V1-R0 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The GTRA362002FC-V1-R0 ensures consistent operation across a wide frequency range. Wolfspeed, Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the GTRA362002FC-V1-R0 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the GTRA362002FC-V1-R0 from Wolfspeed, Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 3.4GHz ~ 3.6GHz
- Gain: 13.5dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 140 mA
- Power - Output: 200W
- Voltage - Rated: 125 V
- Package / Case: H-37248C-4
- Supplier Device Package: H-37248C-4