E3M0075120D
Wolfspeed, Inc.
Wolfspeed, Inc.
1200V AUTOMOTIVE SIC 75MOHM FET
$18.73
Available to order
Reference Price (USD)
1+
$18.73000
500+
$18.5427
1000+
$18.3554
1500+
$18.1681
2000+
$17.9808
2500+
$17.7935
Exquisite packaging
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E3M0075120D
$18.73
Product details
The E3M0075120D from Wolfspeed, Inc. is a technologically advanced single MOSFET transistor belonging to the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - Single). This component sets new standards in power switching efficiency, offering designers a perfect balance between performance and reliability. Engineered with precision, the E3M0075120D demonstrates outstanding characteristics including fast switching capability, low power dissipation, and excellent thermal stability. These features make it particularly suitable for high-frequency applications and power-sensitive designs. The MOSFET finds extensive use in electric vehicle components, industrial welding equipment, and advanced power supply units. It's equally effective in consumer electronics such as high-efficiency LED drivers, smart appliances, and portable electronic devices. For infrastructure applications, the E3M0075120D proves invaluable in telecom power systems, base station equipment, and railway electronics. Its rugged design ensures consistent performance even in challenging operating conditions. Design engineers will appreciate the component's versatility and the design flexibility it offers across multiple voltage and current ranges. To learn more about how the E3M0075120D can enhance your specific application, we invite you to submit an online inquiry. Our technical sales team stands ready to provide detailed product information and purchasing options tailored to your project needs.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 145W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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