W989D6DBGX6E
Winbond Electronics
Winbond Electronics
512MB LPSDR, X16, 166MHZ, 46NM
$3.61
Available to order
Reference Price (USD)
1+
$3.61240
500+
$3.576276
1000+
$3.540152
1500+
$3.504028
2000+
$3.467904
2500+
$3.43178
Exquisite packaging
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| EMS | 3-7 days |
Winbond Electronics W989D6DBGX6E is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W989D6DBGX6E
$3.61
Product details
The W989D6DBGX6E by Winbond Electronics represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The W989D6DBGX6E demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The W989D6DBGX6E also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Winbond Electronics memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the W989D6DBGX6E memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: LVCMOS
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-VFBGA (8x9)
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