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W989D2DBJX6E

Winbond Electronics
W989D2DBJX6E Preview
Winbond Electronics
512MB LPSDR, X32, 166MHZ, 46NM
$3.61
Available to order
Reference Price (USD)
1+
$3.61242
500+
$3.5762958
1000+
$3.5401716
1500+
$3.5040474
2000+
$3.4679232
2500+
$3.431799
Exquisite packaging
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Winbond Electronics W989D2DBJX6E is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W989D2DBJX6E

W989D2DBJX6E

$3.61

Product details

Discover the W989D2DBJX6E by Winbond Electronics, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The W989D2DBJX6E features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The W989D2DBJX6E is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Winbond Electronics memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the W989D2DBJX6E, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: LVCMOS
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-VFBGA (8x13)

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