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W989D2DBJX6E TR

Winbond Electronics
W989D2DBJX6E TR Preview
Winbond Electronics
512MB LPSDR, X32, 166MHZ, 46NM T
$3.32
Available to order
Reference Price (USD)
1+
$3.32270
500+
$3.289473
1000+
$3.256246
1500+
$3.223019
2000+
$3.189792
2500+
$3.156565
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Winbond Electronics W989D2DBJX6E TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W989D2DBJX6E TR

W989D2DBJX6E TR

$3.32

Product details

The W989D2DBJX6E TR from Winbond Electronics is a high-performance memory IC designed for demanding applications. This versatile memory solution offers reliable data storage and fast access times, making it ideal for a wide range of electronic systems. With its advanced architecture, the W989D2DBJX6E TR ensures efficient operation in both industrial and commercial environments. Key features include low power consumption, robust data retention, and seamless integration with various host systems. The memory IC supports multiple read/write operations without compromising performance, ensuring smooth operation in data-intensive scenarios. Its compact design allows for easy implementation in space-constrained applications while maintaining high reliability. Applications span across industries, including automotive electronics for infotainment systems, industrial automation for data logging, and consumer electronics for smart devices. The W989D2DBJX6E TR is also suitable for medical equipment requiring secure data storage and telecommunications infrastructure needing high-speed memory solutions. For pricing and availability of this Winbond Electronics memory IC, please submit your inquiry through our online platform. Our team will provide you with competitive quotes and technical support to meet your project requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: LVCMOS
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-VFBGA (8x13)

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