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W987D6HBGX7E

Winbond Electronics
W987D6HBGX7E Preview
Winbond Electronics
IC DRAM 128MBIT PARALLEL 54VFBGA
$2.78
Available to order
Reference Price (USD)
312+
$2.27327
Exquisite packaging
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TNT 2-6 days
EMS 3-7 days

Winbond Electronics W987D6HBGX7E is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W987D6HBGX7E

W987D6HBGX7E

$2.78

Product details

The W987D6HBGX7E by Winbond Electronics represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers. Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The W987D6HBGX7E demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades. This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The W987D6HBGX7E also serves well in advanced medical imaging equipment and scientific instrumentation. To explore how this Winbond Electronics memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the W987D6HBGX7E memory solution.

General specs

  • Product Status: Last Time Buy
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-VFBGA (8x9)

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