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W987D2HBJX7E

Winbond Electronics
W987D2HBJX7E Preview
Winbond Electronics
IC DRAM 128MBIT PARALLEL 90VFBGA
$2.91
Available to order
Reference Price (USD)
240+
$2.42079
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Winbond Electronics W987D2HBJX7E is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W987D2HBJX7E

W987D2HBJX7E

$2.91

Product details

The W987D2HBJX7E memory IC by Winbond Electronics delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications. Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The W987D2HBJX7E offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance. Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The W987D2HBJX7E is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis. To learn more about implementing this Winbond Electronics memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the W987D2HBJX7E memory solution.

General specs

  • Product Status: Not For New Designs
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-VFBGA (8x13)

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