W978H6KBVX2E TR
Winbond Electronics

Winbond Electronics
256MB LPDDR2, X16, 400MHZ, -25 ~
$4.26
Available to order
Reference Price (USD)
1+
$4.26000
500+
$4.2174
1000+
$4.1748
1500+
$4.1322
2000+
$4.0896
2500+
$4.047
Exquisite packaging
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Winbond Electronics W978H6KBVX2E TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Discover the W978H6KBVX2E TR by Winbond Electronics, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications.
The W978H6KBVX2E TR features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation.
Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The W978H6KBVX2E TR is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions.
To learn more about integrating this Winbond Electronics memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the W978H6KBVX2E TR, ensuring optimal memory performance for your specific requirements.
General specs
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4B
- Memory Size: 256Mb (16M x 16)
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)