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W978H2KBVX1E

Winbond Electronics
W978H2KBVX1E Preview
Winbond Electronics
256MB LPDDR2, X32, 533MHZ, -25 ~
$4.94
Available to order
Reference Price (USD)
1+
$4.94250
500+
$4.893075
1000+
$4.84365
1500+
$4.794225
2000+
$4.7448
2500+
$4.695375
Exquisite packaging
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Winbond Electronics W978H2KBVX1E is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W978H2KBVX1E

W978H2KBVX1E

$4.94

Product details

Winbond Electronics's W978H2KBVX1E memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply. The W978H2KBVX1E features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs. Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The W978H2KBVX1E is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment. Discover the full potential of this Winbond Electronics memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the W978H2KBVX1E to meet your project timeline and budget requirements.

General specs

  • Product Status: Not For New Designs
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4B
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: HSUL_12
  • Clock Frequency: 533 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-VFBGA
  • Supplier Device Package: 134-VFBGA (10x11.5)

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